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October 2001
FDC6401N
Dual N-Channel 2.5V Specified PowerTrench ? MOSFET
General Description
Features
This Dual N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
? 3.0 A, 20 V.
R DS(ON) = 70 m ? @ V GS = 4.5 V
R DS(ON) = 95 m ? @ V GS = 2.5 V
switching PWM controllers. It has been optimized for
low gate charge, low R DS(ON) and fast switching speed.
Applications
? DC/DC converter
? Battery Protection
? Power Management
D2
? Low gate charge (3.3 nC)
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
D1
S1
4
5
3
2
SuperSOT
TM
-6
G1
S2
G2
6
1
T A =25 C unless otherwise noted
Absolute Maximum Ratings
o
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
20
± 12
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
3.0
A
– Pulsed
12
P D
Power Dissipation for Single Operation
(Note 1a)
0.96
W
(Note 1b)
(Note 1c)
0.9
0.7
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.401
Device
FDC6401N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2001 Fairchild Semiconductor Corporation
FDC6401N Rev C (W)
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